| Index | Property |
| 90°±0.15° | Angle etween adjacent sides |
| Index | Property |
| CZ | Growth method |
| <100>±3° | Surface orientation |
| P | Adulterant |
| ≤7*10¹⁷ | Oxygen concentration[Oi] |
| ≤2.5*10¹⁶ | Carbon Concentration[Cs] |
| ≤500/cm² | Etch pit density(dislocation density) |
| ≥800μs | Minority carrier lifetime |
| 0.3-6Ω·cm | Resistivity |
| Index | Property |
| 90°±0.15° | Angle etween adjacent sides |
| Index | Property |
| CZ | Growth method |
| <100>±3° | Surface orientation |
| B | Adulterant |
| ≤7*10¹⁷ | Oxygen concentration[Oi] |
| ≤5*10¹⁶ | Carbon Concentration[Cs] |
| ≤500/cm² | Etch pit density(dislocation density) |
| ≥70μs | Minority carrier lifetime |
| 0.5-1.5Ω·cm | Resistivity |
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