Index | Property |
90°±0.15° | Angle etween adjacent sides |
Index | Property |
CZ | Growth method |
<100>±3° | Surface orientation |
P | Adulterant |
≤7*10¹⁷ | Oxygen concentration[Oi] |
≤2.5*10¹⁶ | Carbon Concentration[Cs] |
≤500/cm² | Etch pit density(dislocation density) |
≥800μs | Minority carrier lifetime |
0.3-6Ω·cm | Resistivity |
Index | Property |
90°±0.15° | Angle etween adjacent sides |
Index | Property |
CZ | Growth method |
<100>±3° | Surface orientation |
B | Adulterant |
≤7*10¹⁷ | Oxygen concentration[Oi] |
≤5*10¹⁶ | Carbon Concentration[Cs] |
≤500/cm² | Etch pit density(dislocation density) |
≥70μs | Minority carrier lifetime |
0.5-1.5Ω·cm | Resistivity |