| Index | Property | Inspection Method |
| 90°±0.12° | Angle Etween Adjacent Sides | Wafer Inspection System |
| Batch Ave:≥Thickness Thickness(110/120/125/130/135/140/145/150μm) Uniwafer Ave:Thickness±8μm |
Thickness | |
| ≤20μm | TTV(Total Thickness Variation) |
| Index | Property | Inspection Method |
| ≤11 ppma | Oxygen Concentration[Oi] | Test methods for determining the orientation of single crystal GBT 1557-2018 |
| ≤1 ppma | Carbon Concentration[Cs] | Test method for substitutional atomic carbon concentration of silicon by infrared absorption GB/T 1558-2009 |
| ≤500/cm⁻² | Etch Pit Density(Dislocation Density) | Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 |
| <100>±3° | Surface Orientation | Test methods for determining the orientation of single crystal GBIT 1555-2023 |
| 0.6-1.6Ω·cm | Resistivity | Wafer Inspection System |
| ≥1000μs | Minority Carrier Lifetime | Transient |
| Index | Property | Inspection Method |
| 90°±0.15° | Angle Etween Adjacent Sides | Wafer Inspection System |
| Batch Ave:≥Thickness Thickness(150μm) Uniwafer Ave:Thickness±10μm |
Thickness | |
| ≤25μm | TTV(Total Thickness Variation) |
| Index | Property | Inspection Method |
| ≤11 ppma | Oxygen Concentration[Oi] | The method of determining interstitial oxygen content in silicon by infrared absorption |
| ≤1 ppma | Carbon Concentration[Cs] | Test method for substitutional atomic carbon concentration of silicon by infrared absorption GB/T 1558-2009 |
| ≤500/cm⁻² | Etch Pit Density(Dislocation Density) | Testing method for crystallographic perfection of silicon by preferential etch techniques |
| <100>±3° | Surface Orientation | Test methods for determining the orientation of single crystal |
| 0.4-1.1Ω·cm | Resistivity | Wafer Inspection System |
| ≥70μs | Minority Carrier Lifetime | Transient |
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