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Pioneering several key technologies
Over 20 years of expertise in N-type production
Low-carbon production
Advanced production capacity
Full traceability
Empowering High-Quality Wafers
Conductance type
N-Type
P-Type
Wafers Type
210*210
182.2*182.2
182.2*183.75
182*210
210*105
Size customized
Geometry
Index Property Inspection Method
90°±0.12° Angle Etween Adjacent Sides Wafer Inspection System
Batch Ave:≥Thickness Thickness(110/120/125/130/135/140/145/150μm)
Uniwafer Ave:Thickness±8μm
Thickness
≤20μm TTV(Total Thickness Variation)
Material Properties
Index Property Inspection Method
≤11 ppma Oxygen Concentration[Oi] Test methods for determining the orientation of single crystal GBT 1557-2018
≤1 ppma Carbon Concentration[Cs] Test method for substitutional atomic carbon concentration of silicon by infrared absorption GB/T 1558-2009
≤500/cm⁻² Etch Pit Density(Dislocation Density) Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 
<100>±3° Surface Orientation Test methods for determining the orientation of single crystal GBIT 1555-2023
0.6-1.6Ω·cm Resistivity Wafer Inspection System
≥1000μs Minority Carrier Lifetime Transient
Geometry
Index Property Inspection Method
90°±0.15° Angle Etween Adjacent Sides Wafer Inspection System
Batch Ave:≥Thickness Thickness(150μm)
Uniwafer Ave:Thickness±10μm
Thickness
≤25μm TTV(Total Thickness Variation)
Material Properties
Index Property Inspection Method
≤11 ppma Oxygen Concentration[Oi] The method of determining interstitial oxygen content in silicon by infrared absorption
≤1 ppma Carbon Concentration[Cs] Test method for substitutional atomic carbon concentration of silicon by infrared absorption GB/T 1558-2009
≤500/cm⁻² Etch Pit Density(Dislocation Density) Testing method for crystallographic perfection of silicon by preferential etch techniques
<100>±3° Surface Orientation Test methods for determining the orientation of single crystal
0.4-1.1Ω·cm Resistivity Wafer Inspection System
≥70μs Minority Carrier Lifetime Transient
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1.What is the main business of QJSOLAR?
QJSOLAR is a highly innovative solar company specializing in producing monocrystalline ingots and wafers. Starting in the 1990s with 2 domestic pullers, QJSOALR embarked on the exploration of N-type products in 2002 and became the first company in China to develop N-type monocrystalline ingots. It has over 20 years of dedication to the N-type ingots and wafers.
2.What are the technologies and innovations of QJSOLAR?
As pioneer in China solar monocrystalline field, QJSOLAR has more than 20 years of dedication to the N-type products experience, pioneering several key technologies. Currently, QJSOLAR has completed the integration of full-line digitization and informatization of production lines and continues to deepen the development of digitization and informatization, always staying at the forefront of technological exploration.
3.What is the production capacity of QJSOLAR?
QJSOLAR focuses on advanced production capacity, with a total planned production capacity of 40GW of ingots and 20GW of wafers. At present, the company is steadily expanding its production capacity and strategically planning the construction projects of the first, second, and third-phase factories.
4.How is the quality performance of QJSOLAR's products?
The business of QJSOLAR covers the global market and has a high level of market recognition. Its products rank among the top in the quality rankings from several clients and have won honorary awards such as the "Annual Quality Contribution Award" the "Certificate of Excellent Partnership" and the "Outstanding Strategic Cooperative Supplier", which are issued by various clients.
5.What sizes of products does QJSOLAR offer?
QJSOLAR focuses on large-sized N-type wafers and provides wafers that cover the mainstream technologies in the PV industry, such as Topcon, HJT, and BC. The sizes include 210*210, 182.2*182.2, 210*182, 183.75*182.2, and it also supports customized services for diversified sizes such as rectangular wafers and half wafers.